Abstract
We present the first demonstration of atomic layer epitaxy (ALE) of HgTe, CdTe and HgCdTe using Hg, Cd and Te alkyl chemistry on GaAs and CdTe substrates. The ALE deposition experiments were done at atmospheric pressure in a horizontal reactor equipped with a fast switching manifold. Methylallytelluride, dimethylmercury (DMHg) and dimethylcadmium were used for Te, Hg and Cd sources respectively. ALE of HgTe was achieved at 140°C, and the monolayer per cycle condition extended over a wide range of DMHg flux. ALE growth of CdTe was carried out over a wide temperature range (250–290°C) and reactant partial pressure. HgCdTe layers were also grown by alternately depositing HgTe and CdTe onto CdTe substrates and then interdiffusing them at higher temperatures.
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