Abstract
Intensity oscillations of reflection high-energy electron diffraction are observed during epitaxial growth of a C60 layer on GaAs substrates. The frequencies of the oscillations coincide well with the growth rates of C60 layers, suggesting that C60 layers grow by layer-by-layer growth mode. C60 uniformly doped and delta-doped GaAs layers are grown by migration enhanced epitaxy method. C60 uniformly doped GaAs layers show highly resistive characteristics, suggesting that C60 molecules cannot be decomposed into isolated C atoms. Electrochemical capacitance-voltage profiles of C60 delta-doped GaAs layers suggest that C60 molecules in GaAs lattice produce deep electron traps which can be charged or discharged by applied electrical fields.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
