Growth and Characterization of C60/GaAs Interfaces and C60 doped GaAs

Abstract

Intensity oscillations of reflection high-energy electron diffraction are observed during epitaxial growth of a C60 layer on GaAs substrates. The frequencies of the oscillations coincide well with the growth rates of C60 layers, suggesting that C60 layers grow by layer-by-layer growth mode. C60 uniformly doped and delta-doped GaAs layers are grown by migration enhanced epitaxy method. C60 uniformly doped GaAs layers show highly resistive characteristics, suggesting that C60 molecules cannot be decomposed into isolated C atoms. Electrochemical capacitance-voltage profiles of C60 delta-doped GaAs layers suggest that C60 molecules in GaAs lattice produce deep electron traps which can be charged or discharged by applied electrical fields.