Abstract
The CH 4/H 2 ratio (growth rate) dependence of B-doped ( 1 1 1 ) homoepitaxial diamond film quality was investigated in the region of CH 4/H 2 ratio ⩽ 1 % and 10 ppm B 2H 6/H 2 ratio in terms of surface morphology, crystallinity, incorporation of impurities and electrical and optical properties. It was found that there are two different growth regimes, which depend on CH 4/H 2 ratio, in B-doped ( 1 1 1 ) film growth. In the region of low CH 4/H 2 ratio growth ⩽ 0.25 % , as CH 4/H 2 ratio increased, film quality was improved in spite of the same incorporation efficiency. This result is different from that of ( 0 0 1 ) diamond film growth. On the other hand, for high ( ⩾ 0.5 % ) CH 4/H 2 ratio growth, significant deterioration in the film quality was observed. Differences between ( 1 1 1 ) and ( 0 0 1 ) in B-doped film growth are discussed.
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