Abstract
ABSTRACTHeteroepitaxial films of GaO were grown on c-plane sapphire (0001). The stable phase β-GaO was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures between 500C and 850C. Metastable α- and ϵ-phases were grown when using the halide vapor phase epitaxy (HVPE) technique, at growth temperatures between 650C and 850C, both separately and in combination. XTEM revealed the better lattice-matched α-phase growing semi-coherently on the substrate, followed by ϵ-GaO. The epitaxial relationship was determined to be [] ϵ-GaO [] α-GaO [] α-AlO. SIMS revealed that epilayers forming the ϵ-phase contain higher concentrations of Cl introduced during HVPE growth.
Highlights
IntroductionThe wide band gap material β-Ga2O3 has attracted rapidly growing interest in the last decade due to its excellent potential for power [1] and ultraviolet optoelectronic devices [2] and its recent availability as singlecrystal substrates [3]
This study demonstrates one of the first epitaxial growths of multiple polymorphs of Ga2O3 on sapphire (0001) substrates, including its β, α, and ε-phases
In concurrence with standard reports of Ga2O3 epitaxy, all films grown in this research by metalorganic chemical vapor deposition (MOCVD) were observed to be β-Ga2O3
Summary
The wide band gap material β-Ga2O3 has attracted rapidly growing interest in the last decade due to its excellent potential for power [1] and ultraviolet optoelectronic devices [2] and its recent availability as singlecrystal substrates [3]. Single-crystal substrates of β-Ga2O3 are grown by a variety of melt-based methods, including floating-zone (FZ) [7–10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods. Increasing interest in the other Ga2O3 phases has arisen in recent years, the metastable rhombohedral α- and hexagonal ε-Ga2O3 phases, both of which have been observed to grow epitaxially on oriented substrates. The α- and ε-phases are of particular interest because of their higher symmetry and simpler epitaxial relationships with c-plane sapphire. Given their similar structures to other wide bandgap materials such as ZnO and AlN, it should
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