Abstract
We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C–V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15µm thick GaAs/InP buffer with a defect density in the low 109cm−2 range and a surface roughness rms value <2nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.
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