Abstract
This study signifies the growth and characterization of aluminium nitride (AlN) thin film deposited on the atmospheric plasma treated n-type silicon [n-Si (100)]. Basically, the low cost spin coating technique which emphasized the production of a thin and uniform film on a flat substrate through a dilute solution is adopted. For the precursor preparation, the main ingredient of aluminium nitrate hydrate is dissolved with an organic solvent. The nitridation process is carried out on the deposited coating at 1100 °C for 1 hour. The surface morphology and structural properties of the thin film were investigated by field-emission scanning electron microscope, atomic force microscopy energy, dispersive X-ray spectroscopy and X-ray diffraction; while the optical properties of the deposited thin film was determined by using Fourier transform infrared spectrometer. All the results revealed that AlN thin film was successfully deposited on n-Si (100) substrate.
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