Abstract
The structure of Si-doped AlGaN multiple quantum well (MQW) targets has been optimized for application to electron-beam (EB)-pumped deep-ultraviolet (UV) light sources. The deep-UV light emission from Si-doped AlGaN MQW targets pumped by a 10 kV EB has been evaluated. The targets exhibited a deep-UV light output power of over 15 mW at a peak wavelength of 256 nm for an EB input power of 2.0 W, and the conversion efficiency was estimated to be over 0.75%. These results demonstrate the advantageousness of using p-type-AlGaN-free AlGaN MQW targets as a material for application to EB-pumped deep-UV light sources.
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