Abstract
Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AlGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical fit of the simulated reflectivity data to the experimental results are used for high precision growth rate calibration. Scanning transmission electron micrographs were used to prove the thickness evaluation. Electro-optical modulation is demonstrated with a considerably higher reflectivity change than is expected from the Franz-Keldysh effect. Finally, a novel layout of the Bragg reflector is proposed which allows implementation in a monolithically integrated microwave or optoelectronic circuit.
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