Abstract
ABSTRACTBulk bismuth telluride (Bi2Te3) is one of the best known thermoelectric materials with a figure of merit ZT ∼1 at room temperature. Theoretical studies have suggested that low-dimensional materials may exhibit ZT values that exceed 1. In this study, we used the pulsed laser vaporization (PLV) method to prepare Bi2Te3 nanowires on silicon and quartz substrates by ablating Bi2Te3 targets in an inert atmosphere. Nano-sized gold or iron catalyst particles were used to seed the growth of the Bi2Te3 nanowires. Results from electron microscopy and Raman spectroscopy are discussed.
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