Abstract
Zn–Se–S composite thin films of mixed cubic and hexagonal phases of ZnSe and ZnS are synthesized by dip process at room temperature. Polycrystalline nature of the films was observed from XRD. Optical band gap of Zn–Se–S thin film was found to be in between individual band gaps of ZnSe and ZnS. The electrical conductivity was found to be in the range of 10 −5–10 −2 (Ω cm) −1. Due to above properties, these films find applications as a buffer layer in solar cells.
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