Abstract
The melting temperatures, the lattice parameters and the optical properties of Nd doped Bi 12SiO 20 have been studied for the diode pumped laser applications. The lattice parameters and the melting temperatures decrease from 10.1055 to 10.1035 Å and from 900 to 890 °C with Nd 2O 3 concentration from 0 to 5 mol%. The crystals grown by Czochralski technique are transparent up to λ = 500 nm. The width of the optical absorption peak due to Nd 3+ ion (λ = 815 nm) is broader than that of Nd doped Y 3Al 5O 12. Segregation coefficient of Nd is estimated to be about k = 0.17. The solubility limit of Nd 2O 3 into Bi 12SiO 20 is also suggested to be about 5 mol%.
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