Abstract
From one uninterrupted growth process, GaN films were deposited on maskless stripe-patterned Si(111) substrates using the facet-initiated growth technique. The epilayer with a flat surface has a thickness of ∼1.3μm. The influence of stress on the behavior of dislocations in the crystal during growth was observed by the transmission electron microscopy (TEM). Concentrated lines of dislocations were found along the coalescence boundaries by atomic force microscopy (AFM). Few dislocations were detected in the other area. The average threading dislocation density of the GaN layer was decreased to ∼1.7×108cm−2. These dislocations have pure or partial screw dislocation characteristics.
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