Growth and characteristics of laser deposited anatase and rutile TiO 2 films on Si substrates

Abstract

Titanium dioxide thin films have been synthesized on Si (100) substrates using pulsed laser deposition method (KrF: 248 nm, 20 ns, 5 Hz). The emission spectra of the plasma induced by ablating TiO 2 target in the oxygen or argon ambient gas were analyzed. The influences of substrate temperature and ambient gas pressure on the structural properties of TiO 2 films were discussed. The X-ray diffraction results show that the films deposited at 750 °C are (004)-oriented anatase phase and (110)-oriented rutile phase under the oxygen and argon pressure of 5 Pa, respectively. The scanning electron microscopy images indicate that the TiO 2 films have a uniform and smooth surface and are composed of nanocrystal grains. The pure anatase and rutile phase TiO 2 films are further proved by Raman spectromicroscopy. In addition, the optical transmission spectra and Fourier Transform infrared spectroscopy of the films were also studied.