Abstract
We studied the growth of ZnO layers on 6H−SiC substrates, focusing on the effects of annealing the ZnO layer, and the thickness of an annealed ZnO layer on a 6H–SiC substrate, on the properties of the layer. X-ray diffraction (XRD) measurements revealed c-axis-oriented growth of the ZnO layer on a 6H−SiC substrate. On annealing, the full width at half maximum (FWHM) of the XRD peaks decreased by a factor of about two and the island size became two times larger, regardless of the ZnO film thickness.
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