Abstract
The growth and characteristics of wide gap II-VI semiconductor nanowires prepared by the so-called Vapour-Liquid-Solid (VLS) technique was presented ZnSe nanowires were prepared on Si (111) by using Au as catalyst. Vapor-Liquid-Solid (VLS) process under certain conditions to form the desired nanowires. The as-synthesized products were characterized by SEM and EDX. The SEM analysis of ZnSe nanowires indicated that nanowires grow randomly at angles widely different from the vertical.
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