Abstract
InSb films having 77 K mobilities above 100000 cm2 V-1 s-1, 77 K carrier concentrations less than 5*1015 cm-3 and X-ray rocking curve widths of 100 arcsec have been grown on GaAs using molecular beam epitaxy (MBE). A thin (300 AA) InSb layer was grown at 300 degrees C using an atomic layer epitaxy (ALE) technique prior to the main InSb growth to reduce defects. Transmission electron microscopy, Nomarski microscopy, X-ray rocking curve widths and channelling Rutherford-backscattering measurements all confirmed the improved quality of these films. The influence of other growth parameters such as substrate temperature, ALE layer thickness and Sb over-pressure on the film properties is discussed. Electron cyclotron resonance (ECR) has been used to characterise the InSb films. Collectively, the results show that the best InSb epilayers have properties approaching bulk InSb.
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