Abstract
Hard CN x films were prepared by nitrogen ion beam-assisted deposition (IBAD) of evaporated carbon on silicon wafers with a nitrogen ion energy of 100–1200 eV, ion/neutral transport ratios from 0.7 to 1.7, and deposition temperatures from RT to 1000°C. By varying the deposition parameters a maximum nitrogen content of below 33 at.% was found at N/C transport ratios of approximately 1.2. XPS measurements reflect a shift of the main chemical state of the nitrogen bonds with changing nitrogen content of the films and with increasing deposition temperature. The nitrogen content of the films decreases significantly with increasing temperatures above 600°C. EELS investigations show weak changes of the plasmon peak position and the sp 2/sp 3 ratio with increasing deposition temperature in correlation to the nitrogen content of the carbon films. Nanoindentation techniques have been used to investigate the mechanical properties of the films. All measured structural and mechanical properties correlate with the analysed nitrogen content.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
