Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

Abstract

In order to analyse and to compare the properties of AlGaN/GaN HEMT on silicon and on sapphire substrates, studies on both layers and device types have been performed. Besides the substantially lower substrate costs compared to SiC, the use of silicon as substrate provides the advantage of a higher thermal conductivity compared to sapphire allowing a more efficient heat removal from the device and thus higher RF power densities. On silicon, up to 900 nm of GaN as well as HEMT structures have been deposited and characterised regarding their structural, optical and electrical properties. HEMT devices with various gate lengths were processed and measured on-wafer under continuous and pulsed operation conditions. The properties of the layers and devices on silicon substrates are developing to become comparable to those based on sapphire and silicon carbide.