Abstract
Progress in growth of cubic SiC (3CSiC) is surveyed. For comparison, homoepitaxial growth of hexagonal SiC (mainly 6HSiC) utilizing step-controlled epitaxy in chemical vapour deposition (CVD), which the author's group named and is a key technology for future development of SiC, is briefly described. Growth of 3C-SiC on Si with the aid of a carbonized layer, a typical success in heteroepitaxial growth with large lattice mismatch, is discussed in detail. The structure and role of the carbonized layer are examined. Characterization of the growth layers is described together with some applications. Growth of 3C-SiC on 6H-SiC by CVD is discussed. As an advanced technique, 3C-SiC crystal growth by a gas source molecular beam in a high vacuum is given and the possibility of atomic layer epitaxy is shown. Single-crystal growth of 3C-SiC on different orientations of 6H-SiC substrates is discussed.
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