Abstract
Dislocations generated at the HgCdTe/CdTe(buffer layer) interface are demonstrated to play a significant role in influencing the crystalline characteristics of HgCdTe epilayers on alternate substrates (AS). A dislocation density >108 cm−2 is observed at the HgCdTe/CdTe interface. Networks of dislocations are generated at the HgCdTe/CdTe interface. The dislocation networks are observed to entangle. Significant dislocation reduction occurs within a few microns of the HgCdTe/CdTe interface. The reduction in dislocation density as a function of depth is enhanced by annealing. Etch pit density and x-ray diffraction full-width at half-maximum values increase as a function of the lattice mismatch between HgCdTe epilayer and the buffer layer/substrate. The experimental results suggest that only by reducing HgCdTe/CdTe lattice mismatch will the desired crystallinity be achieved for HgCdTe epilayers on AS.
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