Abstract
A theoretical analysis of vacancy and self-interstitial distribution during crystal growth has been made in the one-dimensional, steady-state and neutral species-only approximation limit. The effects of crystal movement, normal and up-hill diffusion and annihilation have all been included and, because of nonlinear behavior, the procedure of numerical continuation was required to generate a parametric study of the overall process. The theory is considered to be relevant to the experimental data on commercial CZ silicon crystals and can provide some understanding concerning the macroscopic ring-type defect often found in such crystals. Any comparison between this one-dimensional theory and the available experimental data defines the ranges of the “effective” material parameters involved.
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