Abstract
The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 10 20 cm −3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (⩾3 × 10 20 cm −3 ) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.
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