Growing Cu2ZnSnS4 Thin Film at Low Temperature Using a New Improved Configuration of Close‐Distance CVD Technique

Abstract

AbstractThis study presents a new possibility to deposit the polycrystalline Cu2ZnSnS4 (CZTS) thin film at low temperature using an improved close‐distance chemical vapor deposition reactor. Firstly, a theoretical study is conducted to predict the iodine pressure (PI2) and the substrate temperature (Ts) as the optimal conditions for the deposition of CZTS. The theoretical model is based on the minimization of the Gibbs energy of the Cu‐Zn‐Sn‐S‐I chemical system. An experimental study is realized, and the predicted optimal conditions to obtain quasi‐stoichiometric depositions are tested. The X‐ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, and UV–vis–NIR spectroscopy are used to analyze the thin films elaborated at substrate temperatures of Ts = 400 and 550 °C for iodine pressure PI2 = 0.03 × 105 Pa. With the help of the thermodynamical calculations, the results show that it is possible to grow a good quality CZTS thin film at a low substrate temperature of 400 °C.