Abstract
Materials Science Epitaxial growth is the main technique used for depositing nonsilicon integrated electronic and photonic devices. However, methods for growing devices on amorphous and nonepitaxial substrates are limited. Sarkar et al. overcome this by using standing evaporation or sputtering techniques to deposit a metal, such as indium, with a capping oxide layer. The metal is heated in a hydrogen environment, and a precursor is added to convert the metal to the desired target, such as InP, under conditions where only a single nucleation site forms in each patterned site. The versatility of the method is demonstrated through the growth of InP, GaP, InAs, InGaP, SnP, and Sn4P3 crystals directly on SiO2, Si3N4, TiO2, Al2O3, Gd2O3, SrTiO3, and graphene. ACS Nano 10.1021/acsnano.8b01819 (2018).
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