Abstract
We present a group-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress, based on a self-consistent-field model. The ground state, constructed from three single-hole ${\ensuremath{\Gamma}}_{8}$ states, is itself a ${\ensuremath{\Gamma}}_{8}$ state, whereas the excited states are more complex. The energy splittings of the various states and the relative intensities of the stress-induced components of the optical transitions between those states are determined. Only effects linear in stress are considered.
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