Group III–V Bismide Materials Grown by Liquid Phase Epitaxy

Abstract

AbstractBi containing III–V compound semiconductors have become important in the last few years for many potential device applications. Molecular beam epitaxy and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III–V-Bi series. Due to the restrictions of limited solubility of Bi in III–V solids, use of LPE has so far been limited to the growth of InSbBi and GaSbBi. We describe here details of the growth procedure and the characterization of these two ternaries by different groups with special emphasis on the structural, luminescence, and band gap reduction properties. Theoretical model based on diffusion of Bi across an LPE growth model is described with a view to optimize the growth parameters. Reference is also made to the melt growth of bulk crystals of these compounds and to the LPE growth of InPBi and InAsSbBi epitaxial layers.KeywordsLiquid Phase EpitaxyMolecular Beam Epitaxy GrowthMetalorganic Vapor Phase EpitaxyLongitudinal OpticalGaSb LayerThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.