Abstract
ABSTRACTShort wavelength Vertical Cavity Surface Emitting Laser based on the group III nitrides, GaN, AlN, InN, and their ternary alloys is reported. Optical properties such as band gap and index of refraction of the nitride binary compound were calculated based on the fitting of the experimental data and the first principle calculations. The ternary alloy optical properties were determined in the same manner but based on the binary compound data. The active region containing InGaN strained multiple quantum wells is formed between two Distributed Bragg Reflectors. GaInN/AlN material systems are shown to be the most suitable for highly reflective Bragg mirrors with minimized number of layers. LiGaO2 substrate is proposed for GaN growth due to its small lattice mismatch with GaN (about 0.9%) and its ability to provide a good thermal matching between the two materials. We report VCSEL calculations on threshold current and emission spectra.
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