Abstract
ABSTRACTDiffusion of Li, Na and K into single-crystal substrates of ZnO were performed. We compare the results with ZnO epitaxial films doped with the respective elements during growth. The diffused and in-situ doped layers were studied using mass spectroscopy, low temperature photoluminescence and Raman spectroscopy. Li and Na are known to produce deep acceptor centers which give rise to shallow donor to deep acceptor recombinations in the visible spectral region. We will demonstrate that also shallow acceptors are introduced having binding energies around 300 meV. A donor-acceptor pair recombination (zero phonon line at 3.05 eV) with LO phonon replica is observed analogous to the “edge” emission in other II-VI compounds.
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