Ground state properties of an exciton in a GaAs quantum dot in the presence of an external magnetic field using 1/N expansion method

Abstract

The problem of an exciton trapped in a three dimensional Gaussian quantum dot is studied in the presence of an external magnetic field. 1/N expansion method and shifted 1/N expansion method are employed to obtain the ground state energy of the exciton as a function of the quantum dot size, the confinement strength and the magnetic field. We have also studied the excited states of the exciton in the quantum dot. We could see the probability of quantum dot lasers by tuning the quantum dot parameters.