Abstract

Presents data characterizing room-temperature, continuous-wave (CW) ground state lasing from a 1.07 /spl mu/m quantum dot (QD) VCSEL, and the luminescence characteristics from QDs confined in small oxide apertures. For the QD VCSEL, the threshold current of 703 /spl mu/A is obtained for a 10 /spl mu/m diameter oxide aperture using a three-stack active region, with the lasing wavelength of /spl sim/1.06 /spl mu/m. Threshold currents as low as 268 /spl mu/A are achieved from a 2 /spl mu/m square aperture VCSEL. The threshold conditions are discussed with an emphasis on the spontaneous and stimulated decay rates due to resonant excitation. For very small apertures that provide strong optical confinement, the spontaneous lifetime is altered due to the Purcell effect.

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