Abstract
AbstractIn this work, we demonstrate a ground plane (GP) based Selective Buried Oxide (SELBOX) Junctionless Transistor (JLT), named as GP-SELBOX-JLT. The use of GP and SELBOX in the proposed device reduces the electric field and enhances volume depletion in the channel, hence improvesION/IOFFratio and scalability. Using calibrated 2-D simulation, we have shown that proposed device exhibits better Short Channel Effect (SHE) immunity as compared to SOI-JLT. Therefore, the proposed GP-SELBOX-JLT can be scaled without degrading the performance in sub 20 nm regime. In addition, the ac study has shown that the cutoff frequency (fT) of GP-SELBOX-JLT is almost equal to conventional SOI-JLT.
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