Abstract
Grooved Gate type MOS FET's which realize a short channel device with high punch-through breakdown voltage and little threshold voltage (VT) fluctuation, are fabricated by using a promising photoresist technique. A proposed, self-aligned gate MOS FET structure (Grooved Gate MOS FET) is based on two-dimensional analyses of short channel devices. A characteristic feature of the device is negative source and drain junction depth. The fabricated 21 stage ring oscillator displays a high circuit performance for delay and power product of 0.12 pJ.
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