Grinding of silicon carbide for optical surface fabrication. Part II. Subsurface damage.

Abstract

This paper is the second part of a study of the grinding of three different grades of silicon carbide (SiC) under the same conditions. In this paper, subsurface damage is analyzed using magnetorheological finishing (MRF). The MRF ribbon is brought into contact with the surface and allowed to dwell for different lengths of time to produce dimples or spots at different depths. The roughness parameters are evaluated at the base of the spots. As the spot depth increases the roughness parameters decrease, eventually saturating at a steady-state value. The depth at which saturation occurs is much greater than the initial peak-to-value roughness of the surface and is therefore assumed to be correlated to the depth of subsurface damage in the material. Estimates of the damage depth are comparable to other estimates given in the literature. The validity of this technique is assessed across different grades of SiC under different grinding conditions, and limitations are identified. The study shows that the microstructure of the SiC grade is a major factor that affects the validity of the technique. The technique is suitable for SiC grades that have a more homogeneous microstructure such as chemical vapor deposited or chemical vapor composite grades. The presence of porosity as in the direct sintered grade, or the presence of a secondary phase, for example, silicon in the reaction-bonded and silicon-infiltrated grades, could hinder the technique from providing conclusive results.