Abstract
A passive GaAs/Al0.8Ga0.2As green surface-emitting second-harmonic generator grown on a (211)B GaAs substrate is demonstrated. This orientation offers the same up-conversion efficiency as (110) devices without requiring etched waveguide facets. The GaAs and Al0.8Ga0.2As second-harmonic coefficients are determined from the measured up-conversion efficiencies for TE0 and TM0 mode excitation.
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