Abstract
A Green's function approach, akin to the classical Impedance Field Method, is exploited to derive a compact noise model for long-gate MOSFETs. The model includes diffusion noise as microscopic noise source, accounting for high field mobility and diffusivity effects in the microscopic noise source and in the Green's function evaluation. The analytical model with nominal parameters compares very well with results obtained from an accurate 2D numerical drift-diffusion model, both for the noise density distributions and the device terminal noise spectra.
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