Abstract
AbstractIn the present paper the Green's function approach to nonequilibrium quasi‐free charge carriers in highly excited semiconductors is applied. In doing this a system of kinetic equations for generalized Wigner distributions of renormalized quasi‐electrons and holes is obtained, that takes into account (additionally to well‐known published results) the interaction of the longitudinal optical phonons and the intraband interaction of the radiation field with the electron–hole plasma. Thus, utilizing the corresponding field equations and the suitable boundary conditions, relaxation processes in the semiconductor after excitation by a short laser pulse and a laser probe beam experiment may be described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
