Green, red and near-infrared photon up-conversion in Ga–Ge–Sb–S:Er3+ amorphous chalcogenides

Abstract

We report on compositional tuning in Er3+ ions doped Ga–Ge–Sb–S glassy system allowing for effective 2H11/2→4I15/2 (530nm), 4S3/2→4I15/2 (550nm), 4F9/2→4I15/2 (660nm), 4I9/2→4I15/2 (810nm), 4I11/2→4I15/2 (990nm) intra-4f electronic transition emissions of Er3+ ions under 808nm, 980nm or 1550nm laser pumping. We changed the composition of well-known Ge20Ga5Sb10S65 glass to Ge25Ga10−xSbxS65, where x=0.5at%, 2.5at% or 5.0at% and doped it with 0.5at% of Er3+ ions. The short-wavelength absorption edge of the studied glassy hosts is blue-shifted by substitution of Sb with Ga to ~500nm making the green emission at 530nm and 550nm and even 495nm (4F7/2→4I15/2) observable, while the glass stability was kept high characterized with the difference of Tc−Tg>100K and mean coordination numbers 2.67–2.71. Up-conversion emission decay times of all anti-Stokes emissions were in the range of 0.2–2.1ms. The influence of Ga substitution with Sb on the structure and the optical properties was investigated. The spectroscopic parameters for Er3+ ions with local environment change were analyzed based on Judd–Ofelt theory.