Abstract
We report on the properties of green light-emitting diodes (LEDs) on semipolar microfacets grown by selective area epitaxy. The green LEDs were realized by growing InGaN/GaN multiple quantum wells (MQWs) on the semipolar side facets of triangular n-GaN arrays. Excitation power- and temperature-dependent photoluminescence studies showed that InGaN/GaN MQWs grown on semipolar planes had a high radiative recombination efficiency of carriers due to the negligibly small polarization-induced electric field compared to the MQWs on -plane (0001). The electroluminescence of LEDs exhibited a peak wavelength in the green spectra range and a small blueshift with increasing injection current density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
