Abstract
Cool-green light-emitting Gd2-xTbxSi2O7 (x = 1–6 mol%) doped phosphors were synthesized through the self-sustained solution combustion synthesis (SCS) method. The prepared nanomaterials were characterized via different structural and optical analysis. XRD measurements revealed that the doped samples were structured into a stable triclinic structure. The percentage difference in ionic radii (Dr) between Gd3+ and Tb3+ ions is 1.59%, which authorizes the replacement of Gd3+ ions via the Tb3+ ions. Williamson-Hall (W-H) method, retaining the Scherrer formula, is applied to calculate the average crystallite size of doped phosphors. A Kubelka-Munk function is used to deduce the energy band gap (Eg) values for pure Gd2Si2O7 and representative doped Gd1.96Tb0.04Si2O7 nanophosphors. The morphological studies revealed the random dispersion of agglomerated particles in the nano-range. The electric dipole (ED) 5D4→7F5 transition at 543 nm is accountable for relevant green-light emission. The obtained coordinates fall in the green region of the CIE (1931) triangle and replicate the potency of designated nanomaterials in the design and architecture of R-G-B phosphor-based LEDs.
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