Abstract
Green InGaN-based light-emitting diodes (LEDs) with roughened microhole-array (MHA) structures were fabricated through a dry etching process and a photoelectrochemical (PEC) process. The PEC process consisted of a bandgap-selective lateral etching process at the InGaN active layer, an N-face bottom-up crystallographic etching process at the bottom p-type GaN:Mg layer, and a PEC oxidation process at the n-type GaN:Si surface. The light output power of the MHA-LED and the photoelectrochemically treated microhole-array light-emitting diode (PMHA-LED) had 7 and 65% enhancement, respectively, compared to a conventional LED at a 20 mA operation current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
