Abstract
We report on the properties of green light-emitting diodes (LEDs) on semipolar microfacets grown by selective area epitaxy. The green LEDs were realized by growing InGaN/GaN multiple quantum wells (MQWs) on the semipolar side facets of triangular n-GaN arrays. Excitation power- and temperature-dependent photoluminescence studies showed that InGaN/GaN MQWs grown on semipolar planes had a high radiative recombination efficiency of carriers due to the negligibly small polarization-induced electric field compared to the MQWs on -plane (0001). The electroluminescence of LEDs exhibited a peak wavelength in the green spectra range and a small blueshift with increasing injection current density.
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