Abstract
ZnO:Ga(GZO) thin films were grown on quartz glass under different oxygen partial pressures (PO2). The intensity and the profile of green emission spectra were strongly influenced by PO2. The PL spectra of samples revealed green emissions were relating to transitions between the neutral Ga substitution donor (GaZn) and oxygen interstitial acceptor (Oi). Multi-Gaussian fitting showed green emissions consisted of two adjacent bands located at 2.50 eV and 2.65 eV, which corresponded to GaZn0+VZn−→GaZn++VZn2− and GaZn0+Oi0→GaZn++Oi− transitions, respectively. Concentrations of Oi0 and VZn− were increased with the increasing PO2 is the reason why green emissions were influenced by PO2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
