Abstract
Silicon-based Al2O3 film electroluminescent devices were fabricated by using vacuum electron beam vapor deposition technique. The thin films were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS) and UV–visible grating spectrometer. The electroluminescence spectrum of the device shows two emission peaks in the visible region, the main peak in the green region (503 nm) and the sub-peak in the red region (680 nm). When a forward bias voltage of about 10V is applied, the luminescence of the device is clearly visible to the naked eye in a dark room. And when the forward bias voltage increases to 30V, the luminescence intensity reaches the maximum. In addition, the experiment found that when the annealing temperature of the Al2O3 film is higher than 600 °C, the electroluminescent intensity of the Al2O3 film device gradually deteriorates, until the annealing temperature is higher than 800 °C, the electroluminescence of Al2O3 film devices disappears completely. This work provides a basis for the application of Al2O3 thin film in the field of electroluminescence.
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