Abstract
We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb3+) ions inherent in a Tb4O7 film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n+-Si or p+-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb3+ ions by the hot electrons (holes), which stem from the electric-field acceleration of the electrons (holes) injected from the n+-Si (p+-Si) substrate via the trap-assisted tunneling mechanism.
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