Abstract
A comparison between unimplanted and annealed Ca implanted GaN samples was performed using PL and RBS techniques. Deep DAP recombination at 2.36 and 1.8 eV was found in both samples. New PL lines observed at 3.46, 3.368 and 2.59 eV in the implanted samples are discussed. Rutherford backscattering/channelling measurements reveal that 35% of Ca is located in substitutional Ga sites surrounded by complex defects.
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