Abstract
Palladium decorated reduced graphene oxide/SiO2/Si (Pd–rGO/SiO2/Si) Schottky junction was fabricated by a simple, practical filtration and transfer-printing method. The current–voltage characteristics of the Pd–rGO/SiO2/Si Schottky junction are very sensitive to hydrogen (H2). An ultrahigh gas response of 970% was achieved using the Schottky junction operated in reverse bias mode at room temperature (RT) for detection of 0.16% H2, which is much better than that obtained using graphene-based resistance-type H2 sensors at RT reported previously, due to the junction effect. The gas response enhancement principle demonstrated in this letter can be readily and extensively applied to other graphene-based gas sensing systems.
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