Abstract
Twist-bonded Si/Si (0 0 1) and Si/SiO 2 interfaces have been investigated by grazing incidence X-ray scattering methods. For Si/Si (0 0 1) bonding, conventional X-ray reflectivity reveals the good quality of the interfaces in terms of flatness and roughness. In-plane grazing incidence diffraction measurements around the (2 2 0) reflection show satellite peaks close to the substrate and the layer diffraction peaks. These sharp satellites are produced by a periodic displacement resulting from a very regular buried dislocation network. The Si/SiO 2 bonding has been studied with X-ray reflectivity within a transmission geometry. The analysis of the data shows the high quality of both bonded Si/SiO 2 and thermal oxide SiO 2/Si interfaces.
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