Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors

Abstract

Advanced chalcogenide materials are key for state-of-the art memories, energy harvesting materials and photonics. The properties of thin chalcogenide layers are highly driven by their chemical composition, chemical depth-profiles and surface/interface effects. The combination of Grazing-Incidence X-ray Fluorescence (GIXRF) and X-ray Reflectometry (XRR) techniques allows for non-destructive access to such information, in the lab or at dedicated beamlines. However, the accuracy of the GIXRF-deduced composition slightly degrades with depth, as the enhancement of the XRF signal by the X-ray Standing Wave (XSW) field is usually limited to the first nanometers at the surface of the probed sample. In this paper, we suggest the use of (Mo/Si)*N Bragg mirrors, rather than bare silicon substrates for thin chalcogenide deposition, to improve the sensitivity of GIXRF/XRR analysis to small process-driven modifications. The aim of such multilayered substrates is to maintain high values of X-ray reflected intensity even at angles significantly higher than the critical angle, therefore generating an XSW-induced enhancement of the XRF signal not only at the surface but also in the depth of the layer of interest. The simulation of GIXRF-XRR data, collected at SOLEIL Metrology beamline and in the lab on Rigaku SmartLab diffractometer, on arsenic-free Ovonic Threshold Switch materials (Ge, Se, Sb) for advanced Phase Change memory (PCRAM) applications illustrates the interest of this approach, which is fully-compatible with numbers of PCRAM materials elaborated with low-temperature physical vapor deposition process.