Abstract
When depositing by Molecular Beam Epitaxy a few InAs monolayers onto a (0 0 1) InP substrate, one can obtain an array of self-assembled wires at a nanometer scale. We have performed grazing incidence diffraction anomalous fine structure experiments on capped InAs/InP quantum wires (QWrs) to investigate their structural properties. Elastic strain relaxation has been simulated by the finite differences method.
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